Vor Ort
Merkzettel Warenkorb
Produktbild: Reliability Wearout Mechanisms in Advanced CMOS Technologies

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Aus der Reihe IEEE Press Series on Microelectronic Systems

235,99 €

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

01.09.2009

Abbildungen

Photos: 25 B&W, 0 Color; Drawings: 475 B&W, 0 Color; Tables: 70 B&W, 0 Color

Verlag

John Wiley & Sons Inc

Seitenzahl

640

Maße (L/B/H)

24/16,1/3,9 cm

Gewicht

1120 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-471-73172-6

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

01.09.2009

Abbildungen

Photos: 25 B&W, 0 Color; Drawings: 475 B&W, 0 Color; Tables: 70 B&W, 0 Color

Verlag

John Wiley & Sons Inc

Seitenzahl

640

Maße (L/B/H)

24/16,1/3,9 cm

Gewicht

1120 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-471-73172-6

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: GPSR Kontakt

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)
Die Leseprobe wird geladen.
  • Produktbild: Reliability Wearout Mechanisms in Advanced CMOS Technologies
  • Preface.
     
    1 INTRODUCTION (Alvin W. Strong).
     
    1.1 Book Philosophy.
     
    1.2 Lifetime and Acceleration Concepts.
     
    1.3 Mechanism Types.
     
    1.4 Reliability Statistics.
     
    1.5 Chi-Square and Student t Distributions.
     
    1.6 Application.
     
    2 DIELECTRIC CHARACTERIZATION AND RELIABILITY METHODOLOGY (Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune).
     
    2.1 Introduction.
     
    2.2 Fundamentals of Insulator Physics and Characterization.
     
    2.3 Measurement of Dielectric Reliability.
     
    2.4 Fundamentals of Dielectric Breakdown Statistics.
     
    2.5 Summary and Future Trends.
     
    3 DIELECTRIC BREAKDOWN OF GATE OXIDES: PHYSICS AND EXPERIMENTS (Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sune).
     
    3.1 Introduction.
     
    3.2 Physics of Degradation and Breakdown.
     
    3.3 Physical Models for Oxide Degradation and Breakdown.
     
    3.4 Experimental Results of Oxide Breakdown.
     
    3.5 Post-Breakdown Phenomena.
     
    4 NEGATIVE BIAS TEMPERATURE INSTABILITIES IN pMOSFET DEVICES (Giuseppe LaRosa).
     
    4.1 Introduction.
     
    4.2 Considerations on NBTI Stress Configurations.
     
    4.3 Appropriate NBTI Stress Bias Dependence.
     
    4.4 Nature of the NBTI Damage.
     
    4.5 Impact of the NBTI Damage to Key pMOSFET Transistor Parameters.
     
    4.6 Physical Mechanisms Contributing to the NBTI Damage.
     
    4.7 Key Experimental Observations on the NBTI Damage.
     
    4.8 Nit Generation by Reaction-Diffusion (R-D) Processes.
     
    4.9 Hole Trapping Modeling.
     
    4.10 NBTI Dependence on CMOS Processes.
     
    4.11 NBTI Dependence on Area Scaling.
     
    4.12 Overview of Key NBTI Features.
     
    5 HOT CARRIERS (Stewart E. Rauch, III).
     
    5.1 Introduction.
     
    5.2 Hot Carriers: Physical Generation and Injection Mechanisms.
     
    5.3 Hot Carrier Damage Mechanisms.
     
    5.4 HC Impact to MOSFET Characteristics.
     
    5.5 Hot Carrier Shift Models.
     
    6 STRESS-INDUCED VOIDING (Timothy D. Sullivan).
     
    6.1 Introduction.
     
    6.2 Theory and Model.
     
    6.3 Role of the Overlying Dielectric.
     
    6.4 Summary of Voiding in Al Metallizations
     
    6.5 Stress Voiding in Cu Interconnects.
     
    6.6 Concluding Remarks.
     
    7 ELECTROMIGRATION (Timothy D. Sullivan).
     
    7.1 Introduction.
     
    7.2 Metallization Failure.
     
    7.3 Electromigration.
     
    7.4 General Approach to Electromigration Reliability.
     
    7.5 Thermal Considerations for Electromigration.
     
    7.6 Closing Remarks.
     
    Index.