• Produktbild: Compound Semiconductors for Energy Applications and Environmental Sustainability-2011
  • Produktbild: Compound Semiconductors for Energy Applications and Environmental Sustainability-2011

Compound Semiconductors for Energy Applications and Environmental Sustainability-2011

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

21.11.2011

Herausgeber

L. Douglas Bell + weitere

Verlag

Cambridge University Press

Seitenzahl

178

Maße (L/B/H)

23,5/15,7/1,4 cm

Gewicht

417 g

Sprache

Englisch

ISBN

978-1-60511-301-2

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

21.11.2011

Herausgeber

Verlag

Cambridge University Press

Seitenzahl

178

Maße (L/B/H)

23,5/15,7/1,4 cm

Gewicht

417 g

Sprache

Englisch

ISBN

978-1-60511-301-2

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: Libri GmbH

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  • Produktbild: Compound Semiconductors for Energy Applications and Environmental Sustainability-2011
  • Produktbild: Compound Semiconductors for Energy Applications and Environmental Sustainability-2011
  • Part I. Nitrides: 1. Indium gallium nitride on germanium by molecular beam epitaxy Ruben Lieten; 2. Crack-free III-nitride structures (> 3.5 µm) on silicon Mihir Tungare; 3. Comparison of aluminum nitride nanowire growth with and without catalysts via chemical vapor deposition Kasif Teker; 4. Enhanced light emission at self-assembled GaN inversion domain boundary Yuh-Jen Cheng; 5. AlGaN channel HEMT with extremely high breakdown voltage Takuma Nanjo; 6. Fabrication and optical properties of green emission semipolar {10-11} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays Shih-Pang Chang; Part II. CdTe/CdS: 7. Morphology control of copper indium disulfide nanocrystals Marta Kruszynska; 8. Comparative study in thin-film CdTe solar cells with ZnSe/TCO and CdS/TCO buffer layers Tamara Potlog; 9. Influence of surface preparation on scanning Kelvin probe microscopy and electron backscatter diffraction analysis of cross sections of CdTe/CdS solar cells Helio Moutinho; 10. CdSxTe1-x alloying in CdS/CdTe solar cells Joel Duenow; 11. Influence of annealing in H2 atmosphere on the electrical properties of thin film CdS Jaan Hiie; Part III. CIGS/CIS: 12. Properties of CuIn1-xGaxSe2 films prepared by the rapid thermal annealing of spray-deposited CuIn1-xGaxS2 and Se Christopher Exstrom; 13. I-III-VI2 (copper chalcopyrite-based) thin films for a photoelectrochemical water-splitting tandem-hybrid photocathode Jess Kaneshiro; 14. Identification of impurity phases in Cu2ZnSnS4 thin-film solar cell absorber material by soft x-ray absorption spectroscopy Marcus Bär; 15. Kesterites and chalcopyrites: a comparison of close cousins Ingrid Repins; 16. Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells Jan Keller; 17. Fabrication of high efficiency flexible CIGS solar cell with ZnO diffusion barrier on stainless steel substrate Dowon Bae; 18. Copper indium diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation R. Ernesto Ornelas A.; Part IV. III-V and Other Materials: 19. The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films Huan-hua Wang; 20. DEMUX SiC optical transducers for fluorescent proteins detection Manuela Vieira; 21. Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment Yi Wang; 22. Structure and photocatalytic property of Bi25FeO40 crystallites derived from the PEG assisted sol-gel methods Jinrong Cheng; 23. Zinc nitride films by reactive sputtering of Zn in N2-containing atmosphere Daniel Georgiev.