Vor Ort
Merkzettel Warenkorb
Produktbild: Optical Characterization of Epitaxial Semiconductor Layers

Optical Characterization of Epitaxial Semiconductor Layers

49,99 €

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

14.12.2011

Herausgeber

Günther Bauer + weitere

Verlag

Springer Berlin

Seitenzahl

429

Maße (L/B/H)

23,5/15,5/2,5 cm

Gewicht

680 g

Auflage

Softcover reprint of the original 1st ed. 1996

Sprache

Englisch

ISBN

978-3-642-79680-7

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

14.12.2011

Herausgeber

Verlag

Springer Berlin

Seitenzahl

429

Maße (L/B/H)

23,5/15,5/2,5 cm

Gewicht

680 g

Auflage

Softcover reprint of the original 1st ed. 1996

Sprache

Englisch

ISBN

978-3-642-79680-7

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)
  • Produktbild: Optical Characterization of Epitaxial Semiconductor Layers
  • 1 Introduction.- 2 Analysis of Epitaxial Growth.- 2.1 Vapour Phase Epitaxy: Basics.- 2.2 Gas Phase Diagnostics: Transport.- 2.2.1 Theoretical Considerations.- 2.2.2 Experimental Determination of v and T.- 2.2.2.1 Measurement of Velocities.- 2.2.2.2 Measurement of Temperature.- 2.3 Gas Phase Diagnostics: Reaction Kinetics.- 2.3.1 Optical Techniques.- 2.3.1.1 Absorption Spectroscopy.- 2.3.1.2 Laser Induced Fluorescence.- 2.3.1.3 Spontaneous Raman Scattering.- 2.3.1.4 Coherent Anti-Stokes Raman Scattering.- 2.3.1.5 Other Methods.- 2.3.2 Experimental Results.- 2.3.2.1 Thermal Decomposition of Precursors.- 2.3.2.2 Decomposition Products.- 2.4 Surface Diagnostics.- 2.4.1 Reflectance Anisotropy Spectroscopy (RAS).- 2.4.1.1 Surfaces Under Pregrowth Conditions.- 2.4.1.2 Surfaces During Growth.- 2.4.2 Surface Photo Absorption (SPA).- 2.4.3 Infrared Reflection Absorption Spectroscopy (IRRAS).- 2.4.4 Second Harmonic Generation (SHG).- 2.4.5 Laser Light Scattering (LLS).- 2.5 Conclusions.- 3 Spectroscopic Ellipsometry.- 3.1 Principle of Measurement.- 3.1.1 Null-Ellipsometry.- 3.1.2 Photometric Ellipsometers.- 3.1.3 Description of Light Polarisation.- 3.1.3.1 The Jones Formalism.- 3.1.3.2 Stokes Vectors and Mueller Matrices.- 3.1.4 Rotating Analyser Ellipsometer in the Jones Formalism.- 3.1.5 The Effective Dielectric Function .- 3.2 Experimental Details.- 3.2.1 Rotating Analyser Ellipsometer.- 3.2.2 Photoelastic Modulator Ellipsometer.- 3.2.3 Polarisers.- 3.2.4 Calibration Procedures.- 3.2.5 Experimental Limits.- 3.2.5.1 Angle of Incidence.- 3.2.5.2 Influence of the Windows.- 3.2.6 Trends and New Developments.- 3.3 Interpretation of the Effective Dielectric Function.- 3.3.1 Examples of Dielectric Functions.- 3.3.2 Lineshape Analysis of Optical Gaps.- 3.3.3 Direct Inspection of .- 3.3.4 Single Layers on a Substrate.- 3.3.4.1 The 3-Phase Model.- 3.3.4.2 Determination of Layer Properties.- 3.3.4.3 Ultrathin Layers.- 3.3.5 Inhomogeneous Layers.- 3.4 Characteristic Experimental Examples.- 3.4.1 Interband Critical Points.- 3.4.1.1 Influence of Temperature.- 3.4.1.2 Influence of Defects: Si Implanted GaAs.- 3.4.1.3 Oxide Overlayers.- 3.4.1.4 Size Effects: Microcrystalline Si.- 3.4.2 Semiconductor Heterostructures.- 3.4.2.1 AlGaAs, GaAsP.- 3.4.2.2 InP on InGaAs.- 3.4.2.3 CdS on InP.- 3.4.3 Strained Layers of InGaAs.- 3.4.4 Inhomogeneous Systems: Porous Silicon Layers.- 3.4.5 In-Situ Studies.- 3.4.5.1 Study of GaAs/AlxGa1-xAs Interfaces.- 3.4.5.2 Control of Composition.- 3.4.5.3 Arsenic Layers on Silicon.- 3.4.6 Multilayer Analysis.- 3.5 Sample Related Problems.- 3.5.1 Sample Preparation.- 3.5.2 Multilayer Structures.- 3.5.3 Gradually Varying Composition.- 3.5.4 Anisotropies.- 3.5.5 Quantification of Defects and Strain.- 3.5.6 Depolarisation.- 3.6 Summary.- 4 Raman Spectroscopy.- 4.1 Theory of Raman Spectroscopy.- 4.1.1 Principles of Raman Spectroscopy.- 4.1.2 Electron-Phonon Interaction.- 4.1.3 Resonance Effects.- 4.1.4 Selection Rules.- 4.2 Experimental Setup for Raman Scattering.- 4.2.1 Light Source.- 4.2.2 Raman Spectrometer.- 4.2.3 Multichannel Detector.- 4.2.4 Micro-Raman Spectroscopy.- 4.2.5 In-Situ Experiments.- 4.3 Analysis of Lattice Dynamical Properties.- 4.3.1 Crystalline Order.- 4.3.1.1 Vibrational Modes of Monolayers.- 4.3.1.2 Structure of Thin Overlayers.- 4.3.2 Strain.- 4.3.3 Orientation.- 4.3.4 Composition and Ordering of Mixed Compounds.- 4.3.5 Detection of Reacted Phases.- 4.3.6 Monitoring of Growth.- 4.3.7 Low-Dimensional Effects.- 4.3.7.1 Folded Acoustical Phonons.- 4.3.7.2 Confined Optical Phonons.- 4.3.7.3 Interface Phonons.- 4.4 Analysis of Electronic Properties.- 4.4.1 Electronic Band Structure.- 4.4.2 Impurities.- 4.4.3 Free Carriers.- 4.4.4 Low Dimensional Effects.- 4.5 Band Bending at Interfaces.- 4.5.1 Band Bending Determination by Plasmon-LO-Phonon Modes.- 4.5.2 Band Bending Determination by Electric-Field Induced Raman Scattering.- 4.6 Summary.- 5 Far-Infrared Spectroscopy.- 5.1 Theoretical Foundations.- 5.1.1 Maxwell’s Equations.- 5.1.2 Constitutive Equations and Dispersion Relations.- 5.1.3 Plane Waves in an Isotropic and Homogeneous Medium.- 5.1.4 The Energy Balance.- 5.1.5 Boundary Conditions.- 5.1.6 Coherent and Incoherent Reflection and Transmission of Layered Structures.- 5.1.7 The Dielectric Function ?(?).- 5.1.7.1 The Susceptibility ?PM of Lattice Vibrations.- 5.1.7.2 The Susceptibility ?FC(?) of Free Carriers.- 5.1.8 The Berreman Effect.- 5.1.8.1 The Free Standing Film (?s = 1).- 5.1.8.2 Metal Substrate (??s? ?1).- 5.1.9 Surface Waves.- 5.1.10 Interpretation of Measured Spectra.- 5.2 Fourier Transform Spectroscopy.- 5.2.1 Principle.- 5.2.2 Instrumentation.- 5.3 Determination of Layer Thicknesses.- 5.3.1 Simple Evaluation of Fabry-Perot Interferences.- 5.3.2 Thickness Determination by Fourier Transforms.- 5.3.3 Direct Interferogram Analysis.- 5.3.4 Full Numerical Simulation of Reflectance Spectra.- 5.4 Determination of Carrier Concentrations.- 5.4.1 Semi-Infinite Samples.- 5.4.2 Multilayers.- 5.4.3 Carrier Concentration Profiles.- 5.4.3.1 A Fast Evaluation Scheme for Diffusion Profiles.- 5.5 Confined Electron Systems.- 5.5.1 Properties of Confined Electrons.- 5.5.2 Spectroscopic Techniques.- 5.5.3 Results.- 5.6 Determination of Impurity Concentrations.- 5.6.1 Experimental.- 5.6.2 Impurities in Substrates.- 5.6.2.1 Substitutional Carbon in Silicon.- 5.6.2.2 Interstitial Oxygen in Silicon.- 5.6.2.3 Oxygen Precipitates.- 5.6.3 Impurities in Thin Layers.- 5.7 Shallow Donors and Acceptors.- 5.7.1 Donors and Acceptors in Bulk Materials.- 5.7.2 Donors and Acceptors in Quantum Wells.- 5.8 IR Characterisation of Porous Silicon Layers.- 5.8.1 Effective Medium Theories.- 5.8.2 Examples.- 5.9 Summary.- 6 High Resolution X-Ray Diffraction.- 6.1 Principal Scattering Geometries.- 6.1.1 ? — 2?9-Scan and ?;-Scan (Rocking-curve).- 6.1.2 Double-Crystal Diffraction.- 6.1.3 The 4+1 Crystal Diffractometer.- 6.1.4 Triple-Axis Spectrometer.- 6.1.5 Renninger Scans.- 6.1.6 High-Resolution Multiple-Crystal Multiple-Reflection Diffractometer (HRMCMRD).- 6.2 Kinematical and Dynamical Theory.- 6.3 Thickness Dependence of Bragg Reflections.- 6.4 Strain Phenomena.- 6.4.1 Strains in Epitaxial Layers.- 6.4.2 Partial Relaxation of Strain.- 6.5 Rocking-Curves from Heterostructures.- 6.5.1 Single Heterostructures.- 6.5.2 Composition Gradients.- 6.5.3 Characterisation of Epitaxial Layers Grown Tilted Relative to the Substrates.- 6.6 Multilayer Structures.- 6.6.1 Superlattices.- 6.6.2 Ewald Sphere Construction of SL-Diffraction Diagrams.- 6.6.3 Interpretation of the Fine Structure in X-Ray Diffraction Profiles of SL’s.- 6.6.4 Imperfect MQW’s and Superlattices.- 6.6.4.1 Interdiffusion in MQW’s and SL-Systems.- 6.6.4.2 Imperfect Superlattices: Period, Thickness, Composition Fluctuations.- 6.6.5 Strained-Layer Superlattices: Tilt, Terracing and Mosaic Spread.- 6.7 Scans in the Reciprocal Lattice.- 6.8 New Developments.- 6.8.1 Analysis of Quantum Wire Structures Using HRXRD..- 6.8.2 Real Time X-Ray Diffraction.- 6.9 Grazing-Incidence X-Ray Techniques.- 6.10 Reflection of X-Rays at Grazing Incidence.- 6.11 Specular and Non-Specular Scattering.- 6.12 Grazing-Incidence X-Ray Diffraction.- 6.13 Summary.- 6.14 Concluding Remarks.- References.