• Produktbild: Two-Dimensional Systems: Physics and New Devices
  • Produktbild: Two-Dimensional Systems: Physics and New Devices
Band 67

Two-Dimensional Systems: Physics and New Devices Proceedings of the International Winter School, Mauterndorf, Austria, February 24–28, 1986

49,99 €

inkl. gesetzl. MwSt., Versandkostenfrei


Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

13.07.2013

Herausgeber

Günther Bauer + weitere

Verlag

Springer Berlin

Seitenzahl

333

Maße (L/B/H)

23,5/15,5/1,9 cm

Gewicht

522 g

Auflage

Softcover reprint of the original 1st ed. 1986

Sprache

Englisch

ISBN

978-3-662-02472-0

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

13.07.2013

Herausgeber

Verlag

Springer Berlin

Seitenzahl

333

Maße (L/B/H)

23,5/15,5/1,9 cm

Gewicht

522 g

Auflage

Softcover reprint of the original 1st ed. 1986

Sprache

Englisch

ISBN

978-3-662-02472-0

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)

  • Produktbild: Two-Dimensional Systems: Physics and New Devices
  • Produktbild: Two-Dimensional Systems: Physics and New Devices
  • I Epitaxial Growth: Methods and Characterization.- New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures.- Metalorganic MBE — A New Technique for the Growth of III–V Semiconductor Layers.- Recent Developments in MBE Growth and Properties of Hg1-xCdxTe/CdTe Superlattices.- Transport Properties of Two-Dimensional Electron and Hole Gases in GaAs/AlGaAs Heterostructures.- In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering.- Growth Mode and Interface Structure of MBE Grown SiGe Structures.- II Band Discontinuities.- Elementary Tight-Binding Theory of Schottky-Barrier and Heterojunction Band Line-Ups.- Electrical Measurements of Band Discontinuities at Heterostructure Interfaces.- Heuristic Approach to Band-Edge Discontinuities in Heterostructures.- III Resonant Tunnelling, Multi-Quantum-Well and Superlattice Structures.- Quantum Tunnelling of Electrons Through III–V Heterostructure Barriers.- Recent Results on III–V Superlattices and Quantum Well Structures.- Envelope Function Calculations for Superlattices.- Optical and Electronic Properties of Si/SiGe Superlattices.- Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures.- IV Bound States in Quantum Wells.- Far Infrared Studies of Shallow Donors in GaAs-AlGaAs Quantum Wells.- Magneto-Impurities and Quantum Wells.- The ?(z) Doping Layer: Impurities in the 2-d World of Layered Systems.- V Quantum Hall Effects and Density of States of Landau Levels.- Quantum Hall Effect Experiments at Microwave Frequencies.- The Fractional Quantum Hall Effect in GaAs-GaAlAs Heterojunctions.- Density of States of Landau Levels from Activated Transport and Capacitance Experiments.- Density of States of Landau Levels from Specific Heat and Magnetization Experiments.- The Integer Quantum Hall Effect: An Introduction to the Present State of the Theory.- The Fractional Quantum Hall Effect.- VI New Structures and Devices.- Microwave Performances of GaAlAs/GaAs Heterostructure Devices.- Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices.- Physics and Applications of Doping Superlattices.- Electronic Excitations in Microstructured Two-Dimensional Systems.- VII High Field Transport and Optical Excitation.- Carrier Transport in Semiconductor Devices of Very Small Dimensions.- Parallel-Transport Experiments in 2D Systems.- Time-Resolved Spectroscopy of Hot Carriers in Quantum Wells.- Index of Contributors.