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Produktbild: Intersubband Transitions in Quantum Wells: Physics and Devices
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Intersubband Transitions in Quantum Wells: Physics and Devices Physics and Devices

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Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

14.03.2014

Herausgeber

Sheng S. Li + weitere

Verlag

Springer Us

Seitenzahl

214

Maße (L/B/H)

25,4/17,8/1,3 cm

Gewicht

438 g

Auflage

Softcover reprint of the original 1st ed. 1998

Sprache

Englisch

ISBN

978-1-4613-7639-2

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

14.03.2014

Herausgeber

Verlag

Springer Us

Seitenzahl

214

Maße (L/B/H)

25,4/17,8/1,3 cm

Gewicht

438 g

Auflage

Softcover reprint of the original 1st ed. 1998

Sprache

Englisch

ISBN

978-1-4613-7639-2

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: GPSR Kontakt

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  • Produktbild: Intersubband Transitions in Quantum Wells: Physics and Devices
  • 1 Intersubb and Emission and Lasers.- Short (? ? 3.4 ?m) and Long (? ? 11.5 ?m) Wavelength RoomTemperature Quantum Cascade Lasers.- Quantum Fountain Intersubband Laser at 15.5 ?m Wavelength in GaAs/AlGaAs Quantum Wells.- Quantum Cascade Electroluminescence in the GaAs/AlGaAs Material System.- Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources.- Mid-Infrared Intersubband Emission and Lasing in Optically Pumped Coupled Quantum Well Structures.- Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier and Quantum Cascade Structures.- 2 Quantum Well Infrared Photodetec Tor Physics.- Quantum Well Infrared Photodetectors: Device Physics and Light Coupling.- QWIP Performance and Polarization Selection Rule.- Electric Field Distribution and Low Power Nonlinear Photoresponse of Quantum Well Infrared Photodetectors.- Intersubband Transitions of Normal Incidence N-Type Direct Bandgap Quantum Well Structures.- Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices.- Optical Response Induced By Intersubband Transitions in Quantum Wells: The Role of Multiple Reflections.- The Nature of Unintentional Deep Level Clusters Responsible for Persistent Photoconductivity Effect in GaAs/AlGaAs MQ Photodetectors.- Lateral Physical Effects in Quantum Well Infrared Photodetectors.- 3 Quantum Well and Quantum dot Infrared Detectors.- Strain-Layer Quantum Well Infrared Photodetectors.- Normal Incidence Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectors.- Corrugated Quantum Well Infrared Photodetectors and Transistors.- Normal-incidence P-type Si/SiGe Mid-infrared Detector with Background Limited Performance up to 85 K.- Far-Infrared (?c ? 28.6 ?m)GaAs/AlGaAs Quantum Well Photodetectors.- Quantum Dots Infrared Photodetctors (QDIPs).- Intraband Absorption Spectroscopy of Self-Assembled Quantum Dots.- Spectral Dynamics of the Intersubband Absorption in Quantum Well Structures After Ultrafast IR Excitation.- Energy Relaxation of Electrons in GaAs/AlGaAs Quantum Wells and Superlattices.- Modulated Resonant Raman Spectroscopy Induced by Intersubband Optical Excitation of the Quantum Well Bound and Continuum States.- THz Intersubband Lasers Using the Inverted Mass Scheme.- THz Time-Domain Spectroscopy of an Intersubband Plasmons.- Electrically Excited Terahertz Emission from Parabolic Quantum Wells.- Momentum Space Redistribution Time of Resonantly Photoexcited Excitons in GaAs/AlGaAs Superlattices.- 5 Qwip Focal Plane Arrays (FPAs) for IR Imaging.- 9 Micron Cutoff 640x486 GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera.- System Considerations in the Design of QWIP-Based Thermal Imager.- Electrical and Optical Properties of 8 – 12 ?m GaAs/AlGaAs Quantum Well Infrared Photodetectors in 256 x 256 Focal Plane Arrays.